ARSENIC PASSIVATION OF SI AND GE SURFACES

This article reviews the passivating effect of arsenic monolayers on various silicon and germanium surfaces. It has been shown that such monolayers dramatically reduce the reactivity of the initial surfaces. The atomic structure and the nature of the bonding between the As layer and the various Si and Ge surfaces are described and the reasons for the passivation effects are discussed. Results of experimental and theoretical investigations of As-terminated Si and Ge surfaces are reviewed and compared with the same surfaces terminated with other atomic layers. Finally, the effect of As-termination on interface formation and heteroepitaxy is considered. In particular, the initial stage of GaAs growth on Si, which is dominated by the As-passivation of the Si substrate, is discussed.