EARLY STAGES OF GROWTH OF GAAS ON SI OBSERVED BY SCANNING TUNNELING MICROSCOPY

被引：21

作者：

BIEGELSEN, DK

BRINGANS, RD

NORTHRUP, JE

SWARTZ, LE

机构：

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 23期

关键词：

D O I：

10.1063/1.103864

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using a system coupling molecular beam deposition, scanning tunneling microscopy, and Auger spectroscopy in a connected ultrahigh-vacuum environment, we have observed the initial stages of GaAs growth on vicinal Si(100), including As termination, ordered Ga overlayers, and subsequent competition between two- and three-dimensional structures.

引用

页码：2419 / 2421

页数：3

共 11 条

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