GRADED-THICKNESS SAMPLES FOR MOLECULAR-BEAM EPITAXIAL-GROWTH STUDIES OF GAAS/SI HETEROEPITAXY

[1] GROWTH OF SINGLE DOMAIN GAAS LAYER ON (100)-ORIENTED SI SUBSTRATE BY MOCVD [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (11): : L843 - L845

[2] INITIAL-STAGES OF EPITAXIAL-GROWTH OF GAAS ON (100) SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) : 1856 - 1859

[3] BIEGELSEN DK, 1987, IN PRESS MATER RES S, V102

[4] FORMATION OF THE INTERFACE BETWEEN GAAS AND SI - IMPLICATIONS FOR GAAS-ON-SI HETEROEPITAXY [J]. APPLIED PHYSICS LETTERS, 1987, 51 (07) : 523 - 525

[5] ARSENIC-TERMINATED GE(111) - AN IDEAL 1 X 1 SURFACE [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (05) : 533 - 536

[6] CHAKRAVE.BK, 1967, J PHYS CHEM SOLIDS, V28, P2401, DOI 10.1016/0022-3697(67)90026-1

[7] GRAIN SIZE DISTRIBUTION IN THIN FILMS .2. NON-CONSERVATIVE SYSTEMS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (12) : 2413 - &

[8] EFFECT OF SUBSTRATE SURFACE-STRUCTURE ON NUCLEATION OF GAAS ON SI(100) [J]. APPLIED PHYSICS LETTERS, 1987, 51 (21) : 1723 - 1725

[9] SELF-ANNIHILATION OF ANTIPHASE BOUNDARY IN GAAS ON SI(100) GROWN BY MOLECULAR-BEAM EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (06): : L944 - L946

[10] THE GROWTH OF GAAS ON SI BY MBE [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 205 - 213

[1] GROWTH OF SINGLE DOMAIN GAAS LAYER ON (100)-ORIENTED SI SUBSTRATE BY MOCVD [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (11): : L843 - L845

[2] INITIAL-STAGES OF EPITAXIAL-GROWTH OF GAAS ON (100) SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) : 1856 - 1859

[3] BIEGELSEN DK, 1987, IN PRESS MATER RES S, V102

[4] FORMATION OF THE INTERFACE BETWEEN GAAS AND SI - IMPLICATIONS FOR GAAS-ON-SI HETEROEPITAXY [J]. APPLIED PHYSICS LETTERS, 1987, 51 (07) : 523 - 525

[5] ARSENIC-TERMINATED GE(111) - AN IDEAL 1 X 1 SURFACE [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (05) : 533 - 536

[6] CHAKRAVE.BK, 1967, J PHYS CHEM SOLIDS, V28, P2401, DOI 10.1016/0022-3697(67)90026-1

[7] GRAIN SIZE DISTRIBUTION IN THIN FILMS .2. NON-CONSERVATIVE SYSTEMS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (12) : 2413 - &

[8] EFFECT OF SUBSTRATE SURFACE-STRUCTURE ON NUCLEATION OF GAAS ON SI(100) [J]. APPLIED PHYSICS LETTERS, 1987, 51 (21) : 1723 - 1725

[9] SELF-ANNIHILATION OF ANTIPHASE BOUNDARY IN GAAS ON SI(100) GROWN BY MOLECULAR-BEAM EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (06): : L944 - L946

[10] THE GROWTH OF GAAS ON SI BY MBE [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 205 - 213