A new approach to extract the threshold voltage of MOSFET's

被引：25

作者：

OrtizConde, A

Fernandes, EDG

Liou, JJ

Hassan, MR

GarciaSanchez, FJ

DeMercato, G

Wong, WS

机构：

[1] UNIV CENT FLORIDA,DEPT ELECT & COMP ENGN,ORLANDO,FL 32816

[2] INTEL CORP,SANTA CLARA,CA 95052

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1997年 / 44卷 / 09期

关键词：

D O I：

10.1109/16.622610

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new method is presented to extract the threshold voltage of MOSFET's, It is developed based on an integral function which is insensitive to the drain and source series resistances of the MOSFET's. The method is tested in the environments of circuit simulator (SPICE), device simulation (MEDICI), and measurements.

引用

页码：1523 / 1528

页数：6

共 11 条

[1]

HAASAN MR, 1997, SOLID STATE ELECT, V41, P778

[2] MEASUREMENT OF THRESHOLD VOLTAGE AND CHANNEL LENGTH OF SUB-MICRON MOSFETS [J].