MEASUREMENT OF THRESHOLD VOLTAGE AND CHANNEL LENGTH OF SUB-MICRON MOSFETS

被引：62

作者：

JAIN, S

机构：

来源：

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION | 1988年 / 135卷 / 06期

关键词：

Electric Measurements--Voltage - Transistors--Measurements;

D O I：

10.1049/ip-i-1.1988.0029

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simple method for characterization of MOSFETs with appreciable source and drain series resistance is presented. The ratio g/gm 1/2 of conductance g and transconductance gm is shown to be a linear function of gate bias, whose intercept equals the threshold voltage and whose slope is proportional to the square root of the channel length. The method is illustrated using measurements on 0.4 μm to 1.0 μm channel length LDD transistors.

引用

页码：162 / 164

页数：3

共 7 条

[1]

JAIN S, IN PRESS EQUIVALENCE

[2]

JAIN S, 1988, JAP J APPL PHYS 2

[3]

JAIN SC, IN PRESS SOLID STATE

[4] SOURCE-AND-DRAIN SERIES RESISTANCE OF LDD MOSFETS [J].