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ON THE ACCURACY OF CHANNEL LENGTH CHARACTERIZATION OF LDD MOSFETS
被引:51
作者
:
SUN, JYC
论文数:
0
引用数:
0
h-index:
0
SUN, JYC
WORDEMAN, MR
论文数:
0
引用数:
0
h-index:
0
WORDEMAN, MR
LAUX, SE
论文数:
0
引用数:
0
h-index:
0
LAUX, SE
机构
:
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1986年
/ 33卷
/ 10期
关键词
:
D O I
:
10.1109/T-ED.1986.22707
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:1556 / 1562
页数:7
相关论文
共 12 条
[1]
FINITE-ELEMENT ANALYSIS OF SEMICONDUCTOR-DEVICES - THE FIELDAY PROGRAM
BUTURLA, EM
论文数:
0
引用数:
0
h-index:
0
BUTURLA, EM
COTTRELL, PE
论文数:
0
引用数:
0
h-index:
0
COTTRELL, PE
GROSSMAN, BM
论文数:
0
引用数:
0
h-index:
0
GROSSMAN, BM
SALSBURG, KA
论文数:
0
引用数:
0
h-index:
0
SALSBURG, KA
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1981,
25
(04)
: 218
-
231
[2]
CHEN JGJ, 1980, IEEE ELECTRON DEVICE, V1, P170
[3]
SOURCE-AND-DRAIN SERIES RESISTANCE OF LDD MOSFETS - COMMENTS
DUVVURY, C
论文数:
0
引用数:
0
h-index:
0
DUVVURY, C
BAGLEE, DAG
论文数:
0
引用数:
0
h-index:
0
BAGLEE, DAG
DUANE, MP
论文数:
0
引用数:
0
h-index:
0
DUANE, MP
[J].
IEEE ELECTRON DEVICE LETTERS,
1984,
5
(12)
: 533
-
534
[4]
ACCURACY OF AN EFFECTIVE CHANNEL LENGTH EXTERNAL RESISTANCE EXTRACTION ALGORITHM FOR MOSFETS
LAUX, SE
论文数:
0
引用数:
0
h-index:
0
LAUX, SE
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1984,
31
(09)
: 1245
-
1251
[5]
DESIGN AND CHARACTERISTICS OF THE LIGHTLY DOPED DRAIN-SOURCE (LDD) INSULATED GATE FIELD-EFFECT TRANSISTOR
OGURA, S
论文数:
0
引用数:
0
h-index:
0
OGURA, S
TSANG, PJ
论文数:
0
引用数:
0
h-index:
0
TSANG, PJ
WALKER, WW
论文数:
0
引用数:
0
h-index:
0
WALKER, WW
CRITCHLOW, DL
论文数:
0
引用数:
0
h-index:
0
CRITCHLOW, DL
SHEPARD, JF
论文数:
0
引用数:
0
h-index:
0
SHEPARD, JF
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1980,
15
(04)
: 424
-
432
[6]
BASIC PARAMETER MEASUREMENT AND CHANNEL BROADENING EFFECT IN THE SUBMICROMETER MOSFET
PENG, KL
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WASHINGTON,DEPT ELECT ENGN,SEATTLE,WA 98195
UNIV WASHINGTON,DEPT ELECT ENGN,SEATTLE,WA 98195
PENG, KL
OH, SY
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WASHINGTON,DEPT ELECT ENGN,SEATTLE,WA 98195
UNIV WASHINGTON,DEPT ELECT ENGN,SEATTLE,WA 98195
OH, SY
AFROMOWITZ, MA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WASHINGTON,DEPT ELECT ENGN,SEATTLE,WA 98195
UNIV WASHINGTON,DEPT ELECT ENGN,SEATTLE,WA 98195
AFROMOWITZ, MA
MOLL, JL
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WASHINGTON,DEPT ELECT ENGN,SEATTLE,WA 98195
UNIV WASHINGTON,DEPT ELECT ENGN,SEATTLE,WA 98195
MOLL, JL
[J].
IEEE ELECTRON DEVICE LETTERS,
1984,
5
(11)
: 473
-
475
[7]
A CAPACITANCE METHOD TO DETERMINE CHANNEL LENGTHS FOR CONVENTIONAL AND LDD MOSFETS
SHEU, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
SHEU, BJ
KO, PK
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
KO, PK
[J].
IEEE ELECTRON DEVICE LETTERS,
1984,
5
(11)
: 491
-
493
[8]
SOURCE-AND-DRAIN SERIES RESISTANCE OF LDD MOSFETS
SHEU, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
SHEU, BJ
HU, C
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
HU, C
KO, PK
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
KO, PK
HSU, FC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
HSU, FC
[J].
IEEE ELECTRON DEVICE LETTERS,
1984,
5
(09)
: 365
-
367
[9]
SUN JYC, 1985, 1985 DEV RES C BOULD
[10]
NEW METHOD TO DETERMINE EFFECTIVE MOSFET CHANNEL LENGTH
TERADA, K
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Labs, Nippon Electric Co.Ltd
TERADA, K
MUTA, H
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Labs, Nippon Electric Co.Ltd
MUTA, H
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1979,
18
(05)
: 953
-
959
←
1
2
→
共 12 条
[1]
FINITE-ELEMENT ANALYSIS OF SEMICONDUCTOR-DEVICES - THE FIELDAY PROGRAM
BUTURLA, EM
论文数:
0
引用数:
0
h-index:
0
BUTURLA, EM
COTTRELL, PE
论文数:
0
引用数:
0
h-index:
0
COTTRELL, PE
GROSSMAN, BM
论文数:
0
引用数:
0
h-index:
0
GROSSMAN, BM
SALSBURG, KA
论文数:
0
引用数:
0
h-index:
0
SALSBURG, KA
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1981,
25
(04)
: 218
-
231
[2]
CHEN JGJ, 1980, IEEE ELECTRON DEVICE, V1, P170
[3]
SOURCE-AND-DRAIN SERIES RESISTANCE OF LDD MOSFETS - COMMENTS
DUVVURY, C
论文数:
0
引用数:
0
h-index:
0
DUVVURY, C
BAGLEE, DAG
论文数:
0
引用数:
0
h-index:
0
BAGLEE, DAG
DUANE, MP
论文数:
0
引用数:
0
h-index:
0
DUANE, MP
[J].
IEEE ELECTRON DEVICE LETTERS,
1984,
5
(12)
: 533
-
534
[4]
ACCURACY OF AN EFFECTIVE CHANNEL LENGTH EXTERNAL RESISTANCE EXTRACTION ALGORITHM FOR MOSFETS
LAUX, SE
论文数:
0
引用数:
0
h-index:
0
LAUX, SE
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1984,
31
(09)
: 1245
-
1251
[5]
DESIGN AND CHARACTERISTICS OF THE LIGHTLY DOPED DRAIN-SOURCE (LDD) INSULATED GATE FIELD-EFFECT TRANSISTOR
OGURA, S
论文数:
0
引用数:
0
h-index:
0
OGURA, S
TSANG, PJ
论文数:
0
引用数:
0
h-index:
0
TSANG, PJ
WALKER, WW
论文数:
0
引用数:
0
h-index:
0
WALKER, WW
CRITCHLOW, DL
论文数:
0
引用数:
0
h-index:
0
CRITCHLOW, DL
SHEPARD, JF
论文数:
0
引用数:
0
h-index:
0
SHEPARD, JF
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1980,
15
(04)
: 424
-
432
[6]
BASIC PARAMETER MEASUREMENT AND CHANNEL BROADENING EFFECT IN THE SUBMICROMETER MOSFET
PENG, KL
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WASHINGTON,DEPT ELECT ENGN,SEATTLE,WA 98195
UNIV WASHINGTON,DEPT ELECT ENGN,SEATTLE,WA 98195
PENG, KL
OH, SY
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WASHINGTON,DEPT ELECT ENGN,SEATTLE,WA 98195
UNIV WASHINGTON,DEPT ELECT ENGN,SEATTLE,WA 98195
OH, SY
AFROMOWITZ, MA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WASHINGTON,DEPT ELECT ENGN,SEATTLE,WA 98195
UNIV WASHINGTON,DEPT ELECT ENGN,SEATTLE,WA 98195
AFROMOWITZ, MA
MOLL, JL
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WASHINGTON,DEPT ELECT ENGN,SEATTLE,WA 98195
UNIV WASHINGTON,DEPT ELECT ENGN,SEATTLE,WA 98195
MOLL, JL
[J].
IEEE ELECTRON DEVICE LETTERS,
1984,
5
(11)
: 473
-
475
[7]
A CAPACITANCE METHOD TO DETERMINE CHANNEL LENGTHS FOR CONVENTIONAL AND LDD MOSFETS
SHEU, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
SHEU, BJ
KO, PK
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
KO, PK
[J].
IEEE ELECTRON DEVICE LETTERS,
1984,
5
(11)
: 491
-
493
[8]
SOURCE-AND-DRAIN SERIES RESISTANCE OF LDD MOSFETS
SHEU, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
SHEU, BJ
HU, C
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
HU, C
KO, PK
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
KO, PK
HSU, FC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
HSU, FC
[J].
IEEE ELECTRON DEVICE LETTERS,
1984,
5
(09)
: 365
-
367
[9]
SUN JYC, 1985, 1985 DEV RES C BOULD
[10]
NEW METHOD TO DETERMINE EFFECTIVE MOSFET CHANNEL LENGTH
TERADA, K
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Labs, Nippon Electric Co.Ltd
TERADA, K
MUTA, H
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Labs, Nippon Electric Co.Ltd
MUTA, H
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1979,
18
(05)
: 953
-
959
←
1
2
→