DESIGN AND CHARACTERISTICS OF THE LIGHTLY DOPED DRAIN-SOURCE (LDD) INSULATED GATE FIELD-EFFECT TRANSISTOR

被引：40

作者：

OGURA, S

TSANG, PJ

WALKER, WW

CRITCHLOW, DL

SHEPARD, JF

机构：

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1980年 / 15卷 / 04期

关键词：

D O I：

10.1109/JSSC.1980.1051416

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：424 / 432

页数：9

共 23 条

[1] HOT-CARRIER INSTABILITY IN IGFETS [J].

ABBAS, SA ;

DOCKERTY, RC .

APPLIED PHYSICS LETTERS, 1975, 27 (03) :147-148

[2]

ANTONIADIS DA, 1978, 50192 STANF EL LAB T

[3]

CHATTERJEE PK, 1979, IEDM, P14

[4] HOT-ELECTRON EMISSION IN N-CHANNEL IGFETS [J].

COTTRELL, PE ;

TROUTMAN, RR ;

NING, TH .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) :442-455

[5]

COTTRELL PE, 1975, IEDM TECH DIG, P51

[6] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J].

DENNARD, RH ;

GAENSSLEN, FH ;

YU, HN ;

RIDEOUT, VL ;

BASSOUS, E ;

LEBLANC, AR .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) :256-268

[7] 1 MU-M MOSFET VLSI TECHNOLOGY .2. DEVICE DESIGNS AND CHARACTERISTICS FOR HIGH-PERFORMANCE LOGIC APPLICATIONS [J].

DENNARD, RH ;

GAENSSLEN, FH ;

WALKER, EJ ;

COOK, PW .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) :247-255

[8]

Grove A.S., 1967, PHYS TECHNOL S, P193

[9] A NEW INSTABILITY IN MOS TRANSISTOR CAUSED BY HOT ELECTRON AND HOLE INJECTION FROM DRAIN AVALANCHE PLASMA INTO GATE OXIDE [J].

HARA, H ;

OKAMOTO, Y ;

OHNUMA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (09) :1103-+

[10]

KOHYAMA S, 1979, 11TH C SOL STAT DEV

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