A CAPACITANCE METHOD TO DETERMINE CHANNEL LENGTHS FOR CONVENTIONAL AND LDD MOSFETS

被引：45

作者：

SHEU, BJ ^{[1
]}

KO, PK ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720

来源：

关键词：

D O I：

10.1109/EDL.1984.25999

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：491 / 493

页数：3

共 6 条

[1]

CHEN JGJ, 1980, IEEE ELECTRON DEVICE, V1, P170

[2]

Ko P. K., 1983, International Electron Devices Meeting 1983. Technical Digest, P751

[3] SOURCE-AND-DRAIN SERIES RESISTANCE OF LDD MOSFETS [J].

SHEU, BJ ;

HU, C ;

KO, PK ;

HSU, FC .

[4]

SHEU BJ, UNPUB 1984 IEEE S VL

[5] A SIMPLE-MODEL FOR THE OVERLAP CAPACITANCE OF A VLSI MOS DEVICE [J].

SHRIVASTAVA, R ;

FITZPATRICK, K .

[6] NEW METHOD TO DETERMINE EFFECTIVE MOSFET CHANNEL LENGTH [J].

TERADA, K ;

MUTA, H .