Microstructure and magnetic properties of strained La0.7Sr0.3MnO3 thin films

被引:131
作者
Haghiri-Gosnet, AM
Wolfman, J
Mercey, B
Simon, C
Lecoeur, P
Korzenski, M
Hervieu, M
Desfeux, R
Baldinozzi, G
机构
[1] ISMRA, CRISMAT, Lab Cristallog & Sci Mat, UMR6508, F-14050 Caen, France
[2] Univ Sci & Tech Lille Flandres Artois, Lab Physicochim Interfaces & Applicat, F-62307 Lens, France
[3] Ecole Cent Paris, Lab Struct Proprietes & Modelisat Solides, SPMS, UMR8580, F-92295 Chatenay Malabry, France
关键词
D O I
10.1063/1.1309040
中图分类号
O59 [应用物理学];
学科分类号
摘要
The lattice deformation of dense strained La0.7Sr0.3MnO3 (LSMO) films is shown to control the easy direction of the magnetization. Optimized pulsed laser deposited conditions allow the fabrication of dense LSMO thin films which present an exceptional flatness with a peak-valley roughness (Rp-v) of 1 Angstrom, associated to epitaxial grains as large as 1 mu m. Electron microscopy coupled with x-ray diffraction have been used to study the unit cell distortion of both tensile and compressive dense LSMO films as a function of the thickness. No relaxation of the lattice distortion imposed by substrate has been observed in the thickness range 10-60 nm. The Curie temperature is not significantly affected by the nature of the substrate: a T-C of 350 K is observed for both SrTiO3 (STO) and LaAlO3 (LAO) substrates, i.e., close to the bulk material (369 K). In contrast, the easy direction of magnetization depends on the substrate. For tensile films deposited on the STO substrate, the unit cell is elongated along the film's plane (a(in-plane) = 3.905 Angstrom) with a reduced perpendicular parameter (c(perp) = 3.85 Angstrom): an easy direction of magnetization M in the plane of the film is observed. For compressive films deposited on LAO substrate, the situation is reversed with a unit cell elongated along the direction of growth (c(perp) = 4.00 Angstrom and a(in-plane) = 3.79 Angstrom) and an easy axis for M along this perpendicular out-plane direction. It is thus demonstrated that the larger cell parameter, a(in-plane) for films deposited on STO and c(perp) for films deposited on LAO, is fully correlated to the direction of the easy magnetization. (C) 2000 American Institute of Physics. [S0021-8979(00)08020-8].
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页码:4257 / 4264
页数:8
相关论文
共 22 条
[1]   STRESSES IN SPUTTERED TUNGSTEN THIN-FILMS [J].
HAGHIRIGOSNET, AM ;
LADAN, FR ;
MAYEUX, C ;
LAUNOIS, H .
APPLIED SURFACE SCIENCE, 1989, 38 (1-4) :295-303
[2]  
HAGHIRIGOSNET AM, IN PRESS J APPL PHYS
[3]  
HERVIEU M, UNPUB
[4]  
HUBLER GK, 1984, PULSED LASER DEPOSIT, P346
[5]   Evolution of strain-dependent transport properties in ultrathin La0.67Sr0.33MnO3 films [J].
Ju, HL ;
Krishnan, KM ;
Lederman, D .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (11) :7073-7075
[6]   Stress-induced effects in epitaxial (La0.7Sr0.3)MnO3 films [J].
Kwon, C ;
Robson, MC ;
Kim, KC ;
Gu, JY ;
Lofland, SE ;
Bhagat, SM ;
Trajanovic, Z ;
Rajeswari, M ;
Venkatesan, T ;
Kratz, AR ;
Gomez, RD ;
Ramesh, R .
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1997, 172 (03) :229-236
[7]   High-resolution electron microscopy study of strained epitaxial La0.7Sr0.3MnO3 thin films [J].
Lebedev, OI ;
Van Tendeloo, G ;
Amelinckx, S ;
Ju, HL ;
Krishnan, KM .
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 2000, 80 (03) :673-691
[8]  
MACCORMACK M, 1994, APPL PHYS LETT, V64, P3045
[9]  
MERCEY B, IN PRESS CHEM MAT
[10]  
MERCEY B, 1984, J SOLID STATE CHEM, V116, P37