Pentacene thin film growth

被引：583

作者：

Ruiz, R ^{[1
]}

Choudhary, D

Nickel, B

Toccoli, T

Chang, KC

Mayer, AC

Clancy, P

Blakely, JM

Headrick, RL

Iannotta, S

Malliaras, GG

机构：

[1] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA

[2] Cornell Univ, Chem & Biomol Engn Dept, Ithaca, NY 14853 USA

[3] Univ Munich, Dept Phys, Munich, Germany

[4] Univ Munich, CeNS, Munich, Germany

[5] CNR, ITC, IFN, Sez Trento, Trento, Italy

[6] Univ Vermont, Dept Phys, Burlington, VT 05405 USA

来源：

CHEMISTRY OF MATERIALS | 2004年 / 16卷 / 23期

关键词：

D O I：

10.1021/cm049563q

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Pentacene stands out as a model molecule among organic semiconductors due to its ability to form well-ordered films that show a high field effect mobility. We discuss the processes involved in pentacene film growth, emphasizing differences with respect to inorganic films. The influence of growth parameters such as the substrate nature and temperature, the deposition rate, and the kinetic energy of the molecular beam on the structure and morphology of pentacene films are discussed. Finally, we overview recent attempts to model pentacene film nucleation and growth, and draw attention to the role of dislocations.

引用

页码：4497 / 4508

页数：12

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