Applications and issues for ferroelectric NVMs

Ferroelectric memories compare nicely with other memory types under many aspects, because of their combination, of non-volatility and easy programming/erasing. This work starts with a review of applications where Ferro have a competitive advantage over other conventional NVMs, and the impact of each of them on design and cell architecture. Low cost and low power consumption are key requirements for memory cards and RF ID devices, while embedded macrocells for smart cards demand absolute compatibility with advanced multilevel metallization schemes and CMOS performance. Speed and die area are the key issues for standalone devices. Technology issues to solve in order to define a viable process flow for volume production require, among others, development of conductive barriers to O-2 and non-conductive barriers to H-2. Conformal deposition of electrodes, barriers and ferroelectric materials on the aggressive aspect ratio features and achievement of good switching properties of sub-100 nm capacitors are the main challenges for scaling. The final part features a discussion on the implications involved in processing these materials, and some "recommendations" for defining a viable road map. (C) 2002 Elsevier Science Ltd. All rights reserved.