Investigations of MBE grown InN and the influence of sputtering on the surface composition

被引：26

作者：

Krischok, S

Yanev, V

Balykov, O

Himmerlich, M

Schaefer, JA

Kosiba, R

Ecke, G

Cimalla, I

Cimalla, V

Ambacher, O

Lu, H

Schaff, WJ

Eastman, LF

机构：

[1] Tech Univ Ilmenau, Inst Phys, D-98684 Ilmenau, Germany

[2] Tech Univ Ilmenau, Zentrum Mikro & Nanotechnol, D-98684 Ilmenau, Germany

[3] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14853 USA

来源：

SURFACE SCIENCE | 2004年 / 566卷

关键词：

nitrides; Auger electron spectroscopy; electron energy loss spectroscopy (EELS); photoelectron spectroscopy; molecular beam epitaxy;

D O I：

10.1016/j.susc.2004.06.020

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this study InN films with wurtzite structure grown by plasma induced molecular beam epitaxy were investigated by X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), Auger electron spectroscopy (AES), and electron energy loss spectroscopy (EELS) in order to determine the chemical composition of the sample surfaces before and after ion bombardment. Samples which were investigated without any cleaning procedures showed some contaminations (O and C) due to the previous exposure to air. The ratio between In and N was examined by XPS. The surface contaminations were removed by bombarding the surface with Ar+ ions (E-kin = 500 eV). Due to preferential sputtering an In rich surface is formed. The degree of In enrichment is strongly dependent on the incident angle of the ions. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：849 / 855

页数：7

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