Measuring electronic structure of wurtzite InN using electron energy loss spectroscopy

被引：25

作者：

Mkhoyan, KA ^{[1
]}

Silcox, J

Alldredge, ES

Ashcroft, NW

Lu, H

Schaff, WJ

Eastman, LF

机构：

[1] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA

[2] Cornell Univ, Dept Phys, Ithaca, NY 14853 USA

[3] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 09期

关键词：

D O I：

10.1063/1.1559660

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electronic structure of wurtzite InN has been investigated by electron energy loss spectroscopy (EELS). Spectra of the nitrogen K edge and the indium M-4,M-5 edge have been measured and were compared with calculated partial, N 2p and In 5p conduction band density of states in InN. Excellent agreement on the relative positions of the characteristic peaks were obtained. From low-loss EELS the bulk plasmon energy at 15.5 eV, location of the In 4d deep valence states at about 16.3 eV below the conduction band maximum and strong interband transitions with 6.2 eV excitation energy are also found. (C) 2003 American Institute of Physics.

引用

页码：1407 / 1409

页数：3

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