Observation of an enhanced N 1s shake-up satellite on nitrided Si(100) and correlation with N bonding geometry

被引：5

作者：

Bater, C

Sanders, M

Craig, JH

Pannell, KH

Wang, PW

机构：

[1] Univ Texas, Dept Phys, El Paso, TX 79968 USA

[2] Univ Texas, Inst Mat Res, El Paso, TX 79968 USA

[3] Univ Texas, Dept Chem, El Paso, TX 79968 USA

来源：

APPLIED SURFACE SCIENCE | 2000年 / 161卷 / 3-4期

基金：

美国国家科学基金会;

关键词：

shake-up satellite; Si(100); XPS;

D O I：

10.1016/S0169-4332(00)00112-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Si(100) dosed with NO and thermally nitrided with ammonia was investigated by X-ray photoelectron spectroscopy (XPS) and high-resolution electron energy loss spectroscopy (HREELS) fura wide range of temperatures. A 410-eV peak was observed in the N Is XPS spectrum region. It is proposed to be an enhanced shake-up satellite of the N Is photoelectrons. The temperature dependence of both this peak and HREELS data suggests that precursor silicon nitrides such as planar and pyramidal Si3N species as well as Si3N4 can form at different temperatures. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：328 / 332

页数：5

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