THE ADSORPTION AND DECOMPOSITION OF NH3 ON SI(100) - DETECTION OF THE NH2(A) SPECIES

[1] METASTABLE ANGULAR-DISTRIBUTION FROM ELECTRON-STIMULATED DESORPTION [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (04) : 367 - 370

[2] THE REACTION OF SI(100) 2X1 WITH NO AND NH3 - THE ROLE OF SURFACE DANGLING BONDS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (05): : 1387 - 1392

[3] AVOURIS P, 1988, IN PRESS MATER RES S, V105

[4] ADSORPTION AND THERMAL-DECOMPOSITION OF AMMONIA ON A NI(110) SURFACE - ISOLATION AND IDENTIFICATION OF ADSORBED NH2 AND NH [J]. SURFACE SCIENCE, 1986, 175 (01) : 22 - 44

[5] LOW-TEMPERATURE NITRIDATION AND HYDROGENATION OF SI FILMS WITH NH3 - A PHOTOEMISSION-STUDY [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 : 1407 - 1410

[6] BOZACK MJ, 1987, SURF SCI, V184, pL332, DOI 10.1016/S0039-6028(87)80259-5

[7] REACTION CHEMISTRY AT THE SI(100) SURFACE - CONTROL THROUGH ACTIVE-SITE MANIPULATION [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (10) : 3750 - 3754

[8] DEFECT-ENHANCED AND ELECTRON-ENHANCED CHEMISTRY AT SILICON SURFACES - REACTIVITY AND THERMAL-DESORPTION OF PROPYLENE ON SI(100)-(2X1) [J]. SURFACE SCIENCE, 1986, 176 (03) : 547 - 566

[9] METHODS IN SEMICONDUCTOR SURFACE-CHEMISTRY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (01): : 1 - 8

[10] REACTION OF SI(100) WITH NH3 - RATE-LIMITING STEPS AND REACTIVITY ENHANCEMENT VIA ELECTRONIC EXCITATION [J]. PHYSICAL REVIEW LETTERS, 1986, 57 (09) : 1185 - 1188

[1] METASTABLE ANGULAR-DISTRIBUTION FROM ELECTRON-STIMULATED DESORPTION [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (04) : 367 - 370

[2] THE REACTION OF SI(100) 2X1 WITH NO AND NH3 - THE ROLE OF SURFACE DANGLING BONDS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (05): : 1387 - 1392

[3] AVOURIS P, 1988, IN PRESS MATER RES S, V105

[4] ADSORPTION AND THERMAL-DECOMPOSITION OF AMMONIA ON A NI(110) SURFACE - ISOLATION AND IDENTIFICATION OF ADSORBED NH2 AND NH [J]. SURFACE SCIENCE, 1986, 175 (01) : 22 - 44

[5] LOW-TEMPERATURE NITRIDATION AND HYDROGENATION OF SI FILMS WITH NH3 - A PHOTOEMISSION-STUDY [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 : 1407 - 1410

[6] BOZACK MJ, 1987, SURF SCI, V184, pL332, DOI 10.1016/S0039-6028(87)80259-5

[7] REACTION CHEMISTRY AT THE SI(100) SURFACE - CONTROL THROUGH ACTIVE-SITE MANIPULATION [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (10) : 3750 - 3754

[8] DEFECT-ENHANCED AND ELECTRON-ENHANCED CHEMISTRY AT SILICON SURFACES - REACTIVITY AND THERMAL-DESORPTION OF PROPYLENE ON SI(100)-(2X1) [J]. SURFACE SCIENCE, 1986, 176 (03) : 547 - 566

[9] METHODS IN SEMICONDUCTOR SURFACE-CHEMISTRY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (01): : 1 - 8

[10] REACTION OF SI(100) WITH NH3 - RATE-LIMITING STEPS AND REACTIVITY ENHANCEMENT VIA ELECTRONIC EXCITATION [J]. PHYSICAL REVIEW LETTERS, 1986, 57 (09) : 1185 - 1188