DEFECT-ENHANCED AND ELECTRON-ENHANCED CHEMISTRY AT SILICON SURFACES - REACTIVITY AND THERMAL-DESORPTION OF PROPYLENE ON SI(100)-(2X1)

被引：50

作者：

BOZACK, MJ

CHOYKE, WJ

MUEHLHOFF, L

YATES, JT

机构：

来源：

SURFACE SCIENCE | 1986年 / 176卷 / 03期

关键词：

D O I：

10.1016/0039-6028(86)90054-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

收藏

页码：547 / 566

页数：20

相关论文

共 28 条

[1] EMISSIVITY AT 0.65 MICRON OF SILICON AND GERMANIUM AT HIGH TEMPERATURES
ALLEN, FG
[J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) : 1510 - 1511
[2] DEPENDENCE OF RESIDUAL DAMAGE ON TEMPERATURE DURING AR+ SPUTTER CLEANING OF SILICON
BEAN, JC
BECKER, GE
PETROFF, PM
SEIDEL, TE
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 907 - 913
[3] NEW ORDERED STRUCTURE FOR THE H-SATURATED SI(100) SURFACE - THE (3X1) PHASE
CHABAL, YJ
RAGHAVACHARI, K
[J]. PHYSICAL REVIEW LETTERS, 1985, 54 (10) : 1055 - 1058
[4] INFRARED STUDY OF THE CHEMISORPTION OF HYDROGEN AND WATER ON VICINAL SI(100) 2X1 SURFACES
CHABAL, YJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03): : 1448 - 1451
[5] ANALYSIS OF THERMAL DESORPTION MASS-SPECTRA .1.
CHAN, CM
ARIS, R
WEINBERG, WH
[J]. APPLIED SURFACE SCIENCE, 1978, 1 (03) : 360 - 376
[6] CHEMISORPTION OF HYDROGEN ON THE SI(100) SURFACE - MONOHYDRIDE AND DIHYDRIDE PHASES
CIRACI, S
BUTZ, R
OELLIG, EM
WAGNER, H
[J]. PHYSICAL REVIEW B, 1984, 30 (02): : 711 - 720
[7] ELECTRON-BEAM ASSISTED ADSORPTION ON SI(111) SURFACE
COAD, JP
BISHOP, HE
RIVIERE, JC
[J]. SURFACE SCIENCE, 1970, 21 (02) : 253 - &
[8] PLASMA-ETCHING - DISCUSSION OF MECHANISMS
COBURN, JW
WINTERS, HF
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 391 - 403
[9] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING
COBURN, JW
WINTERS, HF
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3189 - 3196
[10] PLASMA-ASSISTED ETCHING - ION-ASSISTED SURFACE-CHEMISTRY
COBURN, JW
WINTERS, HF
[J]. APPLICATIONS OF SURFACE SCIENCE, 1985, 22-3 (MAY): : 63 - 71