Textured ZnO thin films for solar cells grown by a two-step process with the atomic layer deposition technique

被引:106
作者
Sang, BS [1 ]
Yamada, A [1 ]
Konagai, M [1 ]
机构
[1] Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, Tokyo 152, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1998年 / 37卷 / 2B期
关键词
atomic layer deposition; textured ZnO; transparent conductive oxide;
D O I
10.1143/JJAP.37.L206
中图分类号
O59 [应用物理学];
学科分类号
摘要
B-doped ZnO films are prepared on Corning 7059 glass by atomic layer deposition (ALD) using diethylzinc (DEZn), H2O as reactant gases, and diborane (B2H6) as a dopant gas. A two-step deposition process is introduced to grow textured and low-resistivity ZnO films by combining the ALD and conventional photo-induced metalorgainc chemical vapor deposition (photo-MOCVD) techniques. The electrical and optical properties of ZnO films are effectively improved by depositing lower-resistivity ALD-ZnO films on the textured photo-MOCVD-ZnO films while the textured surface morphologies are well maintained. Furthermore, the resistivity of the ALD-ZnO film was further improved by the two-step process and a low resistivity of 2.0 x 10(-4) Ohm.cm was achieved for the film which was only about 400 nm thick.
引用
收藏
页码:L206 / L208
页数:3
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