Development of plasma chip

被引：20

作者：

Ito, T ^{[1
]}

Izaki, T ^{[1
]}

Terashima, K ^{[1
]}

机构：

[1] Univ Tokyo, Grad Sch Frontier Sci, Dept Adv Mat Sci, Bunkyo Ku, Tokyo 1138656, Japan

来源：

SURFACE & COATINGS TECHNOLOGY | 2000年 / 133卷 / 133-134期

关键词：

plasma chip; microscale plasma; coplanar film electrodes; Langmuir probe measurement;

D O I：

10.1016/S0257-8972(00)00982-8

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A prototype plasma chip has been developed with microscale plasmas generated using coplanar film electrodes (CFE). A plasma chip on which plasma-processing apparatuses are integrated has some advantages for plasma processing compared to conventional ones. For instance, it is highly favorable due to its higher processing speed. The high processing speed results from a combination of high speeds of individual process due to the use of high density microscale plasma and the possibility of parallel processing with integrated apparatuses. The high density of the microscale plasma (gas, H-2; pressure, 1 atm; applied voltage, 450 V; electrodes gap, 10 mum; plasma current, 10(-5) A) has been confirmed experimentally by optical emission spectroscopy and Langmuir probe measurement. This density was above 10(15) cm(-3), much higher than that for macroscale plasma. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：497 / 500

页数：4

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