Correlation between charge transfer exciton recombination and photocurrent in polymer/fullerene solar cells

被引：45

作者：

Hallermann, Markus ^{[1
]}

Da Como, Enrico ^{[1
]}

Feldmann, Jochen ^{[1
]}

Izquierdo, Marta ^{[2
]}

Filippone, Salvatore ^{[2
]}

Martin, Nazario ^{[2
]}

Juechter, Sabrina ^{[3
]}

von Hauff, Elizabeth ^{[3
]}

机构：

[1] Univ Munich, CENS, Photon & Optoelect Grp, Dept Phys, D-80799 Munich, Germany

[2] Univ Complutense Madrid, Dept Organ Chem, E-28040 Madrid, Spain

[3] Carl von Ossietzky Univ Oldenburg, Inst Phys, Energy & Semicond Res Lab, D-26111 Oldenburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 02期

关键词：

gallium compounds; III-V semiconductors; light emitting diodes; nanolithography; nanopatterning; sapphire; semiconductor epitaxial layers; soft lithography; substrates; wide band gap semiconductors; OPEN-CIRCUIT VOLTAGE; POLYMER; BLENDS; DEPENDENCE; ORIGIN;

D O I：

10.1063/1.3462298

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We correlate carrier recombination via charge transfer excitons (CTEs) with the short circuit current, J(sc), in polymer/fullerene solar cells. Near infrared photoluminescence spectroscopy of CTE in three blends differing for the fullerene acceptor, gives unique insights into solar cell characteristics. The energetic position of the CTE is directly correlated with the open-circuit voltage, V(oc), and more important J(sc) decreases with increasing CTE emission intensity. CTE emission intensity is discussed from the perspective of blend morphology. The work points out the fundamental role of CTE recombination and how optical spectroscopy can be used to derive information on solar cell performances. (C) 2010 American Institute of Physics. [doi:10.1063/1.3462298]

引用

页数：3

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