Suppression of parasitic bipolar action in ultra-thin-film fully-depleted CMOS/SIMOX devices by Ar-ion implantation into source/drain regions

被引：25

作者：

Ohno, T ^{[1
]}

Takahashi, M ^{[1
]}

Kado, Y ^{[1
]}

Tsuchiya, T ^{[1
]}

机构：

[1] NTT, Syst Elect Labs, Kanagawa 24301, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 05期

关键词：

integrated circuits; MOSFET's; silicon-on-insulator technology;

D O I：

10.1109/16.669534

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper proposes a new technique that can effectively suppress the parasitic bipolar action (PBA) in ultrathin-film fully-depleted (FD) nMOSFET's/SIMOX with a Boating body. In this technique, recombination centers are created in the source and drain (S/D) regions by deep Ar-ion implantation. They act to reduce the number of holes that accumulate in the body region by increasing the hole current flowing from the body region into the source region. Consequently, the rise of the body potential is lowered, and the parasitic bipolar action can be suppressed. A 0.25-mu m gate nMOSFET/SIMOX fabricated with an Ar dose of 2 x 10(14) cm(-2) exhibited excellent improvements in electrical characteristics: a reduction in the off-leakage current of over two orders of magnitude and an increase in the drain-to-source breakdown voltage beyond 0.6 V.

引用

页码：1071 / 1076

页数：6