Confinement of excitons in spherical quantum dots

被引:69
作者
Marin, JL
Riera, R
Cruz, SA
机构
[1] Univ Sonora, Ctr Invest Fis, Hermosillo 83190, Sonora, Mexico
[2] Univ Sonora, Dept Fis, Hermosillo 83000, Sonora, Mexico
[3] Univ Autonoma Metropolitana Iztapalapa, Dept Fis, Mexico City 09340, DF, Mexico
关键词
D O I
10.1088/0953-8984/10/6/017
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The ground-state energy of excitons confined in microspherical crystallites with a finite-height potential wall is studied variationally as a function of the particle radius in the so-called strong-confinement regime. Exciton energies for dot radii in the range 5-40 Angstrom are calculated and compared with experimental and theoretical data for CdS, CdSe, PbS and CdTe crystallites. This comparison shows that the effective-mass approximation and spherical confinement geometries are appropriate for all of the particle sizes. Our results also show that the quantum dot cannot be modelled using an infinite-barrier-height potential in the strong-confinement regime.
引用
收藏
页码:1349 / 1361
页数:13
相关论文
共 24 条
[1]   ZERO-DIMENSIONAL EXCITONS IN SEMICONDUCTOR CLUSTERS [J].
BRUS, L .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1909-1914
[5]   CONFINEMENT OF EXCITONS IN QUANTUM DOTS [J].
EINEVOLL, GT .
PHYSICAL REVIEW B, 1992, 45 (07) :3410-3417
[6]   QUANTUM SIZE EFFECT IN SEMICONDUCTOR MICROCRYSTALS [J].
EKIMOV, AI ;
EFROS, AL ;
ONUSHCHENKO, AA .
SOLID STATE COMMUNICATIONS, 1985, 56 (11) :921-924
[7]  
GRADSHTEYN IS, 1980, TABLES INTEGRALS SER, P310
[8]   QUANTUM-SIZE EFFECTS OF INTERACTING ELECTRONS AND HOLES IN SEMICONDUCTOR MICROCRYSTALS WITH SPHERICAL SHAPE [J].
KAYANUMA, Y .
PHYSICAL REVIEW B, 1988, 38 (14) :9797-9805
[9]   INCOMPLETE CONFINEMENT OF ELECTRONS AND HOLES IN MICROCRYSTALS [J].
KAYANUMA, Y ;
MOMIJI, H .
PHYSICAL REVIEW B, 1990, 41 (14) :10261-10263
[10]   COMPARISON BETWEEN CALCULATED AND EXPERIMENTAL VALUES OF THE LOWEST EXCITED ELECTRONIC STATE OF SMALL CDSE CRYSTALLITES [J].
LIPPENS, PE ;
LANNOO, M .
PHYSICAL REVIEW B, 1990, 41 (09) :6079-6081