Gate-induced crossover from unconventional metals to Fermi liquids in multiwalled carbon nanotubes

被引：8

作者：

Kanbara, T ^{[1
]}

Iwasa, T

Tsukagoshi, K

Aoyagi, Y

Iwasa, Y

机构：

[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[2] RIKEN, Wako, Saitama 3510198, Japan

[3] Tokyo Inst Technol, Yokohama, Kanagawa 3368502, Japan

[4] Japan Sci & Technol Agcy, PRESTO, Kawaguchi 3320012, Japan

[5] Japan Sci & Technol Agcy, CREST, Kawaguchi 3320012, Japan

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 26期

基金：

日本学术振兴会;

关键词：

D O I：

10.1063/1.1842373

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We observed an ambipolar behavior in multiwalled carbon nanotubes in a backgate configuration, which allowed us to perform systematic inspection of the low-temperature transport properties against gate voltage. The results revealed that a power-law temperature-dependent conductance, which is a sign of an unconventional metallic state, disappears when a high gate voltage is applied, and conductance becomes temperature independent, indicating a normal Fermi liquid state. This demonstrates a field effect tuning of electronic states in nanoscaled materials. (C) 2004 American Institute of Physics.

引用

页码：6404 / 6406

页数：3

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