Proximity effect of electron beam lithography for single-electron transistor fabrication

In this letter, we shall describe a method, utilizing the proximity effect in electron beam lithography, suitable for fabricating silicon dots and devices, and demonstrate the electronic characteristics of the Si single-electron transistor. The drain current (I-d) of the device oscillates against gate voltage. The electrical characteristics of the single-electron transistor were observed to be consistent with the expected behavior of electron transport through gated quantum dots, at up to 150 K. The dependence of the electrical characteristics on the dot size reveals that the I-d oscillation follows from the Coulomb blockade by poly-Si grains in the poly-Si dot. The method of fabrication of this device is completely compatible with complementary metal-oxide-semiconductor technology, raising the possibility of manufacturing large-scale integrated nanoelectronic systems. (C) 2004 American Institute of Physics.