Simulating Si multiple tunnel junctions from pinch-off to ohmic conductance

被引：8

作者：

Müller, HO

Williams, DA

Mizuta, H

Durrani, ZAK

机构：

[1] Cavendish Lab, Hitachi Cambridge Lab, Cambridge CB3 0HE, England

[2] Cavendish Lab, Microelect Res Ctr, Cambridge CB3 0HE, England

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2000年 / 74卷 / 1-3期

关键词：

simulation; Si multiple tunnel junctions; pinch-off; ohmic conductance;

D O I：

10.1016/S0921-5107(99)00530-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Due to their compatibility with CMOS, multiple tunnel junctions (MTJs) are giving rise to an increasing interest in Coulomb blockade silicon devices, along with a higher demand for simulation. Whereas the operating principle has been known for a number of years, here we present new simulation results on MTJs, including geometric island size and island separation. Application of MTJ in a memory cell is discussed. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：36 / 39

页数：4

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