THE MULTIPLE TUNNEL JUNCTION AND ITS APPLICATION TO SINGLE-ELECTRON MEMORIES

被引：12

作者：

NAKAZATO, K ^{[1
]}

AHMED, H ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,DEPT PHYS,CAVENDISH LAB,CAMBRIDGE CB3 0HE,ENGLAND

来源：

ADVANCED MATERIALS | 1993年 / 5卷 / 09期

关键词：

D O I：

10.1002/adma.19930050917

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Single-electron memories and single-electron logic circuits are two devices that can be constructed from multiple tunnel junctions (MTJs). The electrical characteristics of this basic building block are described, and the fabrication of very small MTJ devices is outlined. The simple structure of the MTJ and the low power consumption and small size of MTJ devices could open up a new era in electron device technology, with devices being constructed from materials completely different from those used in the present semiconductor industry.

引用

页码：668 / 671

页数：4

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