SrTiO3 homoepitaxy by the pulsed laser deposition method:: island, layer-by-layer, and step-flow growth

被引：17

作者：

Song, JH

Jeong, YH ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Phys, Pohang 790784, South Korea

[2] Pohang Univ Sci & Technol, Elect Spin Sci Ctr, Pohang 790784, South Korea

来源：

SOLID STATE COMMUNICATIONS | 2003年 / 125卷 / 10期

关键词：

crystal growth; epitaxy; laser processing; reflection high-energy electron diffraction;

D O I：

10.1016/S0038-1098(03)00005-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

SrTiO3 homoepitaxy was investigated under various conditions using the pulsed laser deposition method. The growth mode was determined by in-situ reflection high-energy electron diffraction, and the surface of the films was characterized by ex-situ 2 atomic force microscopy. At the laser fluence of 0.68 J/cm(2), island growth was observed below 500degreesC substrate temperature, while the growth mode turned into layer-by-layer growth above 500degreesC. On further raising the substrate temperature, the step-flow growth mode prevailed above 800degreesC. We thus demonstrated that step-flow growth in SrTiO3 homoepitaxy is possible at a temperature as low as 800degreesC. (C) 2003 Elsevier Science Ltd. All rights reserved.

引用

页码：563 / 566

页数：4

共 8 条

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Christy D. B., 1994, PULSED LASER DEPOSIT

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