Fabrication of strained Si/strained SiGe/strained si heterostructures on insulator by a bond and etch-back technique

被引：8

作者：

Åberg, I ^{[1
]}

Olubuyide, OO ^{[1
]}

Li, J ^{[1
]}

Hull, R ^{[1
]}

Hoyt, JL ^{[1
]}

机构：

[1] MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA

来源：

2004 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS | 2004年

关键词：

D O I：

10.1109/SOI.2004.1391544

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：35 / 36

页数：2

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