Implementation of both high-hole and electron mobility in strained Si/strained Si1-yGey on relaxed Si1-xGex (x < y) virtual substrate

被引：51

作者：

Jung, JW

Lee, ML

Yu, SF

Fitzgerald, EA

Antoniadis, DA

机构：

[1] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA

[2] Intel Corp, Hillsboro, OR 97124 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 07期

关键词：

dual heterostructure; effective mobility; SiGe; strain; virtual substrate;

D O I：

10.1109/LED.2003.814028

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-hole and electron mobility in complementary channels in strained silicon (Si) on top of. strained Si0.4Ge0.6, both grown on a relaxed Si0.7Ge0.3 virtual substrate is shown for the first time. The buried Si0.4Ge0.6 serves as a high-mobility p-channel, and the strained-Si cap serves as a high-mobility n-channel. The effective mobility, measured in devices with a 20-mum gate length and 3.8-nm gate oxide, shows about 2.2similar to2.5 and 2.0 times enhancement in hole and electron mobility, respectively, across a wide vertical field range. In addition, it is found that as the Si cap thickness decreased, PMOS transistors exhibited. increased mobility especially at medium- and high-hole density in this heterostructure.

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页码：460 / 462

页数：3

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