Growth and characterization of non-c-oriented epitaxial ferroelectric SrBi2Ta2O9 films on buffered Si(100)

被引：39

作者：

Lee, HN ^{[1
]}

Senz, S ^{[1
]}

Zakharov, ND ^{[1
]}

Harnagea, C ^{[1
]}

Pignolet, A ^{[1
]}

Hesse, D ^{[1
]}

Gösele, U ^{[1
]}

机构：

[1] Max Planck Inst Mikrostrukturphys, D-06120 Halle, Germany

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 20期

关键词：

D O I：

10.1063/1.1324982

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have grown non-c-oriented SrBi2Ta2O9 (SBT) epitaxial thin films with well-defined (116) orientation by pulsed laser deposition on yttria-stabilized zirconia-buffered (YSZ-buffered) Si(100) substrates covered with electrically conductive (110)-oriented SrRuO3 (SRO) bottom electrodes. The epitaxial growth of (110)-oriented SRO films on (100)-oriented YSZ on Si(100) was confirmed both by x-ray pole figures and transmission electron microscopy (TEM) analyses showing a diagonal-type rectangle-on-cube epitaxy of SRO on YSZ with respect to the substrate and yielding specific multiple twins which originate from the particular in-plane positioning of SRO on YSZ. Cross-sectional TEM analyses revealed a roof-like morphology at the SBT/SRO interface while the other interfaces are sharp. The ferroelectric measurements of the (116)-oriented SBT films show a remanent polarization (2P(r)) of 6.8 muC/cm(2) and a coercive field (2E(c)) of 142 kV/cm for a maximum applied electric field of 283 kV/cm. A comparable hysteresis loop recorded from local piezoresponse by an atomic force microscope working in a piezoelectric mode has also been obtained. (C) 2000 American Institute of Physics. [S0003-6951(00)00346-6].

引用

页码：3260 / 3262

页数：3