High temperature electrical conductivity of epitaxial Gd-doped CeO2 thin films

被引：49

作者：

Chen, L

Chen, CL

Huang, DX

Lin, Y

Chen, X

Jacobson, AJ

机构：

[1] Univ Houston, Dept Chem, Houston, TX 77204 USA

[2] Univ Houston, Dept Phys, Houston, TX 77204 USA

来源：

SOLID STATE IONICS | 2004年 / 175卷 / 1-4期

关键词：

gadolinia-doped ceria; epitaxial thin films; impedance spectroscopy; electrical conductivity;

D O I：

10.1016/j.ssi.2004.09.034

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Single-crystalline epitaxial Gd-doped CeO2 (GCO, Gd0.2Ce0.8O1.9 ) thin films were grown on (001) NdGaO3 (NGO) and LaAlO3 (LAO) substrates through pulsed-laser deposition. The electrical conductivity was investigated by AC impedance spectroscopy. The temperature dependence of the electrical conductivity gives an activation energy of 0.74 eV for GCO/NGO and a conductivity which is very close to that of the bulk polycrystalline material. For GCO films deposited on LAO, the conductivity of the substrate makes a significant contribution to the total measured conductivity.

引用

页码：103 / 106

页数：4

共 15 条

[1] Defect and transport properties of nanocrystalline CeO2-x [J].