A carbonaceous thin film made by CVD and its application for a carbon/N-type silicon (C/N-Si) photovoltaic cell

被引：24

作者：

Yu, HA

Kaneko, T

Otani, S

Sasaki, Y

Yoshimura, S

机构：

[1] ERATO, JST, Yoshimura Pi Electron Mat Project, Shizuoka 41003, Japan

[2] Tokai Univ, Sch High Technol Human Welf, Dept Mat Sci & Technol, Shizuoka 41003, Japan

[3] Gunma Univ, Fac Engn, Dept Elect & Elect Sci, Gunma 376, Japan

来源：

CARBON | 1998年 / 36卷 / 1-2期

关键词：

amorphous carbon; chemical vapor deposition; electrical properties;

D O I：

10.1016/S0008-6223(97)00170-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A carbonaceous thin film was made by CVD of 2,5-dimethyl-p-benzoquinone at temperatures between 500 and 1000 degrees C and its structural and electronic properties have been studied. The carbonaceous thin film made at 500 degrees C has a energy bandgap of 0.25-0.3 eV and a positive Hall coefficient of 5 x 10(-5) m(3) C-1 belong to a p-type semiconductor. A photovoltaic cell with carbonaceous thin film/n-type silicon (C/n-Si) was fabricated by depositing the carbonaceous thin film on an n-type silicon substrate at 500 degrees C. The C/n-Si photovoltaic cell has a hetero-type junction with a junction barrier of 0.54 eV and a depletion layer of 1.1 mu m in thickness at zero bias. Under a simulated light of 15 mW . cm(-2), the C/n-Si photovoltaic cell gives a power conversion efficiency of 6.45%. (C) 1997 Elsevier Science Ltd. All rights reserved.

引用

页码：137 / 143

页数：7

共 16 条

[1] SEMICONDUCTING AMORPHOUS-CARBON FILMS AND CARBON-SINGLE-CRYSTAL SILICON HETEROJUNCTIONS [J].