Time-resolved luminescence of InP quantum dots in a Ga0.5In0.5P matrix:: Carrier injection from the matrix

被引：21

作者：

Okuno, T ^{[1
]}

Ren, HW

Sugisaki, M

Nishi, K

Sugou, S

Masumoto, Y

机构：

[1] Univ Tsukuba, Inst Phys, Ibaraki, Osaka 305, Japan

[2] Tsukuba Res Consortium, IST, ERATO, Single Quantum Dot Project, Ibaraki, Osaka 30026, Japan

[3] NEC Corp Ltd, Opto Elect Res Labs, Ibaraki, Osaka 305, Japan

来源：

PHYSICAL REVIEW B | 1998年 / 57卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.57.1386

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We conducted time-resolved luminescence spectroscopy on self-assembled InP dots in a Ga0.5In0.5P matrix at different photon excitation energies. In comparison with results on Ga0.5In0.5P without dots, the influence of the Ga0.5In0.5P matrix on luminescence-decay profiles of InP dots was clarified, By excitation at the Ga0.5In0.5P matrix, the long-decay component (similar to 50 ns), as well as the 400 ps radiative-decay component, was observed in luminescence of InP dots. This long-decay component reflects carrier lifetime in the Ga0.5In0.5P matrix, Carrier injection time from the Ga0.5In0.5P matrix to InP dots is estimated to be similar to 100 ps, and is determined by carrier diffusion in the matrix.

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页码：1386 / 1389

页数：4

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