Adsorption of Ca on stepped Si(001) probed by resonant optical second harmonic generation

被引：9

作者：

Chandola, S ^{[1
]}

Cavanagh, M ^{[1
]}

Power, JR ^{[1
]}

McGilp, JF ^{[1
]}

机构：

[1] Trinity Coll, Dept Phys, Dublin 2, Ireland

来源：

THIN SOLID FILMS | 1998年 / 313卷

关键词：

second harmonic generation; seps; silicon(001); gallium; resonance; epioptics;

D O I：

10.1016/S0040-6090(97)00885-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Resonant optical second harmonic generation (SHG) recently has been shown to be a powerful probe of Si surfaces and interfaces. In this work, a resonance in the region of 3.3 eV is exploited to reveal structural information on the adsorption of Ga on vicinal Si(001) surfaces. It is shown that coverages of less than 0.01 monolayer of Ga can be detected, and that contributions to the SH intensity from terraces and steps can be distinguished. In particular, it is shown that Ga atoms interact with the steps at room temperature, behaviour undetected by scanning tunnelling microscopy. (C) 1998 Elsevier Science S.A.

引用

页码：565 / 567

页数：3

共 8 条

[1] SURFACE-STRUCTURES AND GROWTH-MECHANISM OF GA ON SI(100) DETERMINED BY LEED AND AUGER-ELECTRON SPECTROSCOPY [J].