SURFACE-STRUCTURES AND GROWTH-MECHANISM OF GA ON SI(100) DETERMINED BY LEED AND AUGER-ELECTRON SPECTROSCOPY

被引：96

作者：

BOURGUIGNON, B

CARLETON, KL

LEONE, SR

机构：

[1] NBS,JOINT INST LAB ASTROPHYS,BOULDER,CO 80309

[2] UNIV COLORADO,DEPT CHEM & BIOCHEM,BOULDER,CO 80309

来源：

SURFACE SCIENCE | 1988年 / 204卷 / 03期

关键词：

D O I：

10.1016/0039-6028(88)90226-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：455 / 472

页数：18

共 38 条

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[5] INITIAL-STAGES OF EPITAXIAL-GROWTH OF GAAS ON (100) SILICON
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[6] AES AND LEED STUDIES CORRELATING DESORPTION ENERGIES WITH SURFACE-STRUCTURES AND COVERAGES FOR GA ON SI(100)
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LEONE, SR
[J]. SURFACE SCIENCE, 1988, 204 (03) : 473 - 484
[7] BOZACK MJ, 1987, SURF SCI, V184, pL332, DOI 10.1016/S0039-6028(87)80259-5
[8] DEFECT-ENHANCED AND ELECTRON-ENHANCED CHEMISTRY AT SILICON SURFACES - REACTIVITY AND THERMAL-DESORPTION OF PROPYLENE ON SI(100)-(2X1)
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[J]. SURFACE SCIENCE, 1986, 176 (03) : 547 - 566
[9] SURFACE BANDS FOR SINGLE-DOMAIN 2X1 RECONSTRUCTED SI(100) AND SI(100)-AS - PHOTOEMISSION RESULTS FOR OFF-AXIS CRYSTALS
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UHRBERG, RIG
OLMSTEAD, MA
BACHRACH, RZ
[J]. PHYSICAL REVIEW B, 1986, 34 (10): : 7447 - 7450
[10] LASER PROBING OF GALLIUM ATOM INTERACTIONS WITH SILICON(100) SURFACES
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 1141 - 1146

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