GROWTH AND PROPERTIES OF SINGLE DOMAIN GAAS, ALGAAS AND THEIR HETEROSTRUCTURES ON SI BY MOCVD AND MBE

[1] GROWTH OF VANADIUM-DOPED SEMI-INSULATING GAAS BY MOCVD [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 39 - 43

[2] GROWTH OF SINGLE DOMAIN GAAS LAYER ON (100)-ORIENTED SI SUBSTRATE BY MOCVD [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (11): : L843 - L845

[3] AKIYAMA M, 1984, J CRYST GROWTH, V68, P21, DOI 10.1016/0022-0248(84)90391-9

[4] CHARACTERISTICS OF GAAS/AIGAAS MODFETS GROWN DIRECTLY ON (100) SILICON [J]. ELECTRONICS LETTERS, 1984, 20 (22) : 945 - 947

[5] OPTICAL-PROPERTIES OF GAAS ON (100) SI USING MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1984, 45 (12) : 1309 - 1311

[6] METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS FABRICATED IN GAAS-LAYERS GROWN DIRECTLY ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1984, 45 (10) : 1107 - 1109

[7] Nakamura H., 1983, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. Technical Digest 1983, P134

[8] GROWTH OF SINGLE DOMAIN GAAS ON 2-INCH SI(100) SUBSTRATE BY MOLECULAR-BEAM EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (06): : L391 - L393

[9] NISHI S, 1985, 17TH C SOL STAT DEV, P213

[10] FABRICATION OF GAAS-MESFET RING OSCILLATOR ON MOCVD GROWN GAAS/SI(100) SUBSTRATE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (12): : L919 - L921

[1] GROWTH OF VANADIUM-DOPED SEMI-INSULATING GAAS BY MOCVD [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 39 - 43

[2] GROWTH OF SINGLE DOMAIN GAAS LAYER ON (100)-ORIENTED SI SUBSTRATE BY MOCVD [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (11): : L843 - L845

[3] AKIYAMA M, 1984, J CRYST GROWTH, V68, P21, DOI 10.1016/0022-0248(84)90391-9

[4] CHARACTERISTICS OF GAAS/AIGAAS MODFETS GROWN DIRECTLY ON (100) SILICON [J]. ELECTRONICS LETTERS, 1984, 20 (22) : 945 - 947

[5] OPTICAL-PROPERTIES OF GAAS ON (100) SI USING MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1984, 45 (12) : 1309 - 1311

[6] METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS FABRICATED IN GAAS-LAYERS GROWN DIRECTLY ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1984, 45 (10) : 1107 - 1109

[7] Nakamura H., 1983, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. Technical Digest 1983, P134

[8] GROWTH OF SINGLE DOMAIN GAAS ON 2-INCH SI(100) SUBSTRATE BY MOLECULAR-BEAM EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (06): : L391 - L393

[9] NISHI S, 1985, 17TH C SOL STAT DEV, P213

[10] FABRICATION OF GAAS-MESFET RING OSCILLATOR ON MOCVD GROWN GAAS/SI(100) SUBSTRATE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (12): : L919 - L921