STEPS ON (001) SILICON SURFACES

[1] GROWTH AND PROPERTIES OF SINGLE DOMAIN GAAS, ALGAAS AND THEIR HETEROSTRUCTURES ON SI BY MOCVD AND MBE [J]. SURFACE SCIENCE, 1986, 174 (1-3) : 19 - 30

[2] AKIYAMA M, 1984, J CRYST GROWTH, V68, P21, DOI 10.1016/0022-0248(84)90391-9

[3] AKIYAMA M, 1986, MATER RES SOC S P, V67, P53

[4] PERFORMANCE OF QUARTER-MICRON GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS ON SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1986, 49 (24) : 1654 - 1655

[5] BIATOMIC STEPS ON (001) SILICON SURFACES [J]. PHYSICAL REVIEW LETTERS, 1986, 57 (24) : 3054 - 3057

[6] Bringans R. D., 1987, 18th International Conference on the Physics of Semiconductors, P191

[7] SURFACE BANDS FOR SINGLE-DOMAIN 2X1 RECONSTRUCTED SI(100) AND SI(100)-AS - PHOTOEMISSION RESULTS FOR OFF-AXIS CRYSTALS [J]. PHYSICAL REVIEW B, 1986, 34 (10): : 7447 - 7450

[8] THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES [J]. PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) : 299 - 358

[9] CASTELLAN GW, 1971, PHYSICAL CHEM

[10] HIGH-RESOLUTION INFRARED-SPECTROSCOPY OF ADSORBATES ON SEMICONDUCTOR SURFACES - HYDROGEN ON SI(100) AND GE(100) [J]. SURFACE SCIENCE, 1986, 168 (1-3) : 594 - 608

[1] GROWTH AND PROPERTIES OF SINGLE DOMAIN GAAS, ALGAAS AND THEIR HETEROSTRUCTURES ON SI BY MOCVD AND MBE [J]. SURFACE SCIENCE, 1986, 174 (1-3) : 19 - 30

[2] AKIYAMA M, 1984, J CRYST GROWTH, V68, P21, DOI 10.1016/0022-0248(84)90391-9

[3] AKIYAMA M, 1986, MATER RES SOC S P, V67, P53

[4] PERFORMANCE OF QUARTER-MICRON GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS ON SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1986, 49 (24) : 1654 - 1655

[5] BIATOMIC STEPS ON (001) SILICON SURFACES [J]. PHYSICAL REVIEW LETTERS, 1986, 57 (24) : 3054 - 3057

[6] Bringans R. D., 1987, 18th International Conference on the Physics of Semiconductors, P191

[7] SURFACE BANDS FOR SINGLE-DOMAIN 2X1 RECONSTRUCTED SI(100) AND SI(100)-AS - PHOTOEMISSION RESULTS FOR OFF-AXIS CRYSTALS [J]. PHYSICAL REVIEW B, 1986, 34 (10): : 7447 - 7450

[8] THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES [J]. PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) : 299 - 358

[9] CASTELLAN GW, 1971, PHYSICAL CHEM

[10] HIGH-RESOLUTION INFRARED-SPECTROSCOPY OF ADSORBATES ON SEMICONDUCTOR SURFACES - HYDROGEN ON SI(100) AND GE(100) [J]. SURFACE SCIENCE, 1986, 168 (1-3) : 594 - 608