Navigation aids in the search for future high-k dielectrics:: Physical and electrical trends

被引：115

作者：

Engstrom, O. ^{[1
]}

Raeissi, B.

Hall, S.

Buiu, O.

Lemme, M. C.

Gottlob, H. D. B.

Hurley, P. K.

Cherkaoui, K.

机构：

[1] Chalmers Univ Technol, SE-41296 Gothenburg, Sweden

[2] Univ Liverpool, Liverpool L69 3GJ, Merseyside, England

[3] AMO GmbH, D-52074 Aachen, Germany

[4] Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland

来源：

SOLID-STATE ELECTRONICS | 2007年 / 51卷 / 04期

基金：

英国工程与自然科学研究理事会;

关键词：

high-k dielectrics; dielectric constant; CMOS; rare earth oxides;

D O I：

10.1016/j.sse.2007.02.021

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

From experimental literature data on metal oxides combined with theoretical estimates, we present empirical relations for k-values and energy band offset values, that can be used in the search for gate dielectric materials fulfilling the needs of future CMOS generations. Only a few materials investigated so far have properties meeting the demands for k and energy band offset values in the development of CMOS down to 22 nm. (c) 2007 Elsevier Ltd. All rights reserved.

引用

页码：622 / 626

页数：5

共 27 条

[21] DIELECTRIC POLARIZABILITIES OF IONS IN OXIDES AND FLUORIDES [J].