Bias-assisted photoelectrochemical etching of p-GaN at 300 K

Photoelectrochemical (PEC) etching of p-type GaN has been realized in room temperature, 0.1 M KOH solutions. PEC etching of GaN was achieved by applying a positive bias to the surface of the p-GaN layer through a deposited titanium mask. The applied bias reduces the field at the semiconductor surface, which induced the dissolution of the GaN. The effect of bias on etch rate and morphology was examined. It was found that insulating the Ti mask from the KOH solution with Si3N4 significantly increases the etch rate. The rms roughness of the etched region decreased as the bias voltage increased. Etch rates as high as 4.4 nm/min were recorded for films etched at 2 V. (C) 2000 American Institute of Physics. [S0003-6951(00)05434-6].