Theory of the anisotropy of the electron Hall mobility in n-type 4H-and 6H-SiC

A theoretical model for the calculation of the anisotropy in the electron Hall mobility is reported for n-type bulk single crystals of 4H- and 6H-SiC for the three distinct Hall measurement configurations: (a) [B parallel to c, j perpendicular to c], (b) [B perpendicular to c, j perpendicular to c], and (c) [B perpendicular to c, j parallel to c], where B, j, and c are the directions of the magnetic field, current flow, and c axis of the hexagonal unit cell, respectively. Comparison with experimental results shows that the anisotropy of the electron transport in both 4H- and 6H-SiC can be explained solely by the anisotropy in the effective electron mass tensors. (C) 2000 American Institute of Physics. [S0021-8979(00)01316-5].