AlSb/InAs HEMTs using modulation InAs(Si)-doping

被引：9

作者：

Boos, JB ^{[1
]}

Bennett, BR ^{[1
]}

Kruppa, W ^{[1
]}

Park, D ^{[1
]}

Yang, MJ ^{[1
]}

Shanabrook, BV ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 04期

关键词：

D O I：

10.1049/el:19980219

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlSb/InAs HEMTs have been fabricated using Si-coping in a very thin (9 Angstrom) InAs layer located in the upper AlSb barrier. Quantum Hall measurements show that there is no parallel channel. Devices with a 0.5 mu m gate length exhibit a drain current density of > 1A/mm and an f(T)L(g) product of 30 GHz mu m at V-DS = 0.4 V after correction for the gate bonding pad capacitance.

引用

页码：403 / 404

页数：2

共 7 条

[1]

BENNETT BR, UNPUB APPL PHYS LETT

[2] IMPROVED CHARGE CONTROL AND FREQUENCY PERFORMANCE IN INAS/ALSB-BASED HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS [J].