HIGH-TRANSCONDUCTANCE INAS/ALSB HETEROJUNCTION FIELD-EFFECT TRANSISTORS WITH DELTA-DOPED ALSB UPPER BARRIERS

被引：69

作者：

WERKING, JD

BOLOGNESI, CR

CHANG, LD

NGUYEN, C

HU, EL

KROEMER, H

机构：

[1] Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 03期

基金：

加拿大自然科学与工程研究理事会;

关键词：

D O I：

10.1109/55.144998

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the fabrication and temperature-dependent characterization of InAs/AlSb quantum-well heterojunction field-effect transistors (HFET's). Devices with electron sheet concentrations of 3.8 x 10(12) cm-2 and low-field electron mobilities of-21 000 cm2/V . s have been realized through the use of Te delta-doping sheets in the upper AlSb barrier. One device with a 2.0-mu-m gate length showed a peak extrinsic transconductance of 473 mS/mm at room temperature. Gate leakage current, operating current density, and extrinsic transconductance were found to decrease with decreasing temperature.

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收藏

页码：164 / 166

页数：3

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