AN INAS CHANNEL HETEROJUNCTION FIELD-EFFECT TRANSISTOR WITH HIGH TRANSCONDUCTANCE

被引：48

作者：

YOH, KJ

MORIUCHI, T

INOUE, M

机构：

[1] Department of Electrical Engineering, Osaka Institute of Technology, Osaka 535, 5-16-1 Omiya, Asahi-ku

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 11期

关键词：

D O I：

10.1109/55.63021

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on an InAs channel field-effect transistor (FET) based on AlGaSb/InAs/AlSb/AIGaSb structures grown by molecular beam epitaxy. Excellent pinch-off characteristics have been obtained. An FET with a gate length of 1.7 μm showed transconductances ranging from 460 mS/mm (at Vds = 0.5 V) to 509 mS/mm (at Vds = 1 V) and a K factor (∂gm/2∂Vg) of 1450 mS/Vmm (at Vds = 1 V) at room temperature. © 1990 IEEE

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页码：526 / 528

页数：3

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