Electronic Structure of Few-Layer Graphene: Experimental Demonstration of Strong Dependence on Stacking Sequence

被引:2169
作者
Mak, Kin Fai [1 ,2 ]
Shan, Jie [3 ]
Heinz, Tony F. [1 ,2 ]
机构
[1] Columbia Univ, Dept Phys, New York, NY 10027 USA
[2] Columbia Univ, Dept Elect Engn, New York, NY 10027 USA
[3] Case Western Reserve Univ, Dept Phys, Cleveland, OH 44106 USA
基金
美国国家科学基金会;
关键词
BILAYER GRAPHENE; GRAPHITE; KISH;
D O I
10.1103/PhysRevLett.104.176404
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The electronic structure of few-layer graphene (FLG) samples with crystalline order was investigated experimentally by infrared absorption spectroscopy for photon energies ranging from 0.2-1 eV. Distinct optical conductivity spectra were observed for different samples having precisely the same number of layers. The different spectra arise from the existence of two stable polytypes of FLG, namely, Bernal ( AB) stacking and rhombohedral (ABC) stacking. The observed absorption features, reflecting the underlying symmetry of the two polytypes and the nature of the associated van Hone singularities, were reproduced by explicit calculations within a tight-binding model. The findings demonstrate the pronounced effect of stacking order on the electronic structure of FLG.
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页数:4
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