Growth of layered perovskite Bi4Ti3O12 thin films by sol-gel process

被引：19

作者：

Gu, HS ^{[1
]}

Dong, C

Chen, PZ

Bao, DH

Kuang, AX

Li, XJ

机构：

[1] Hubei Univ, Inst Piezoelect Ceram Technol, Wuhan 430062, Peoples R China

[2] Wuhan Inst Chem Technol, Dept Precis Chem, Wuhan 430073, Peoples R China

[3] Huazhong Univ Sci & Technol, Dept Solid State Elect, Wuhan 430074, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 186卷 / 03期

关键词：

Bi4Ti13O12; thin film; sol-gel; c-axis orientation;

D O I：

10.1016/S0022-0248(97)00508-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Ferroelectric Bi4Ti3O12 thin films were prepared on SrTiO3 crystal substrates by a sol-gel process. A homogeneous and stable precursor solution was obtained from Bi(NO3)(3) and Ti(OC4H9)(4). Stability of solution was determined by its pH value, which directly affects the growth behaviour and orientation of the thin films. The single-phase Bi4Ti3O12 polycrystalline thin films were grown at 500 degrees C by using a pH 2.5 solution, which turns into highly c-axis orientation at 550 degrees C. Completely c-axis oriented thin film was prepared by using a solution of pH 3.5. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：403 / 408

页数：6

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