Comparison between TiAl and TiAlNiAu ohmic contacts to n-type GaN

被引：31

作者：

Boudart, B ^{[1
]}

Trassaert, S

Wallart, X

Pesant, JC

Yaradou, O

Théron, D

Crosnier, Y

Lahreche, H

Omnes, F

机构：

[1] Univ Sci & Tech Lille Flandres Artois, Dept Hyperfrequences & Semicond, UMR CNRS 8520, Inst Elect & Microelect Nord, F-59652 Villeneuve Dascq, France

[2] CNRS, Ctr Rech Hetero Epitaxie & Applicat, F-06560 Valbonne, France

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2000年 / 29卷 / 05期

关键词：

GaN; ohmic contacts; XPS; AFM; aging tests;

D O I：

10.1007/s11664-000-0052-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report a comparison between Ti/Al and Ti/Al/Ni/Au ohmic contacts in terms of contact resistivity, thermal stability, depth profile, and surface morphology. The metals were deposited by conventional electron-beam evaporation, and then annealed at 900 degrees C for 30 s in a N-2 atmosphere. The lowest value for the specific contact resistivity was obtained using Ti/Al/Ni/Au metallization. Ti/Al/Ni/Au contacts showed no increase in contact resistivity after aging for five days at 600 degrees C in an air atmosphere. Examination of the surface morphology using atomic force microscopy revealed that the surface roughness was clearly better in the case of Ti/Al/Ni/Au contacts. X-ray photoelectron spectroscopy was also employed and gave primary results of Ti/Al/Ni/Au contact formation.

引用

页码：603 / 606

页数：4

共 11 条

[1]

BRIGGS D, 1990, PRACTICAL SURFACE AN, V1

[2] Very low resistance multilayer ohmic contact to n-GaN [J].

Fan, ZF ;

Mohammad, SN ;

Kim, W ;

Aktas, O ;

Botchkarev, AE ;

Morkoc, H .

APPLIED PHYSICS LETTERS, 1996, 68 (12) :1672-1674

[3] METAL CONTACTS TO GALLIUM NITRIDE [J].

FORESI, JS ;

MOUSTAKAS, TD .

APPLIED PHYSICS LETTERS, 1993, 62 (22) :2859-2861

[4] LOW-RESISTANCE OHMIC CONTACTS ON WIDE BAND-GAP GAN [J].

LIN, ME ;

MA, Z ;

HUANG, FY ;

FAN, ZF ;

ALLEN, LH ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1994, 64 (08) :1003-1005

[5] Study of contact resistivity, mechanical integrity, and thermal stability of Ti/Al and Ta/Al ohmic contacts to n-type GaN [J].

Luther, BP ;

Mohney, SE ;

Delucca, JM ;

Karlicek, RF .

JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (04) :196-199

[6] Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts to n-type GaN [J].

Luther, BP ;

Mohney, SE ;

Jackson, TN ;

Khan, MA ;

Chen, Q ;

Yang, JW .

APPLIED PHYSICS LETTERS, 1997, 70 (01) :57-59

[7] Analysis of a thin AlN interfacial layer in Ti/Al and Pd/Al ohmic contacts to n-type GaN [J].

Luther, BP ;

DeLucca, JM ;

Mohney, SE ;

Karlicek, RF .

APPLIED PHYSICS LETTERS, 1997, 71 (26) :3859-3861

[8] The effects of reactive ion etching-induced damage on the characteristics of ohmic contacts to n-type GaN [J].

Ping, AT ;

Chen, Q ;

Yang, JW ;

Khan, MA ;

Adesida, I .

JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (04) :261-265

[9] IMPROVEMENT OF OHMIC CONTACTS ON GAAS WITH INSITU CLEANING [J].

REN, F ;

EMERSON, AB ;

PEARTON, SJ ;

FULLOWAN, TR ;

BROWN, JM .

APPLIED PHYSICS LETTERS, 1991, 58 (10) :1030-1032

[10] Microstructure of Ti/Al ohmic contacts for n-AlGaN [J].

Ruvimov, S ;

Liliental-Weber, Z ;

Washburn, J ;

Qiao, D ;

Lau, SS ;

Chu, PK .

APPLIED PHYSICS LETTERS, 1998, 73 (18) :2582-2584

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