Microstructure of Ti/Al ohmic contacts for n-AlGaN

被引：117

作者：

Ruvimov, S ^{[1
]}

Liliental-Weber, Z

Washburn, J

Qiao, D

Lau, SS

Chu, PK

机构：

[1] Lawrence Berkeley Lab, Berkeley, CA 94720 USA

[2] Univ Calif San Diego, La Jolla, CA 92093 USA

[3] City Univ Hong Kong, Hong Kong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 18期

关键词：

D O I：

10.1063/1.122512

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transmission electron microscopy was employed to evaluate the microstructure of Al/Ti ohmic contacts to AlGaN/GaN heterostructure field-effect transistor structures. Contact resistance was found to depend on the structure and composition of the metal and AlGaN layers, and on atomic structure of the interface. A 15-25-nm-thick interfacial AlTi2N layer was observed at the contact-AlGaN interface. Formation of such nitrogen-containing layers appears to be essential for ohmic behavior on n-type III-nitride materials suggesting a tunneling contact mechanism. Contact resistivity was found to increase with Al fraction in the AlGaN layer. (C) 1998 American Institute of Physics. [S0003-6951(98)01244-3].

引用

页码：2582 / 2584

页数：3

共 15 条

[1] Ultrahigh Si+ implant activation efficiency in GaN using a high-temperature rapid thermal process system [J].