EFFECT OF ION-BEAM SPUTTER DAMAGE ON SCHOTTKY-BARRIER FORMATION IN SILICON

[1] ON RESOLVING THE ANOMALY OF INDIUM-TIN OXIDE SILICON JUNCTIONS [J]. ELECTRON DEVICE LETTERS, 1981, 2 (07): : 184 - 186

[2] DEPENDENCE OF RESIDUAL DAMAGE ON TEMPERATURE DURING AR+ SPUTTER CLEANING OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 907 - 913

[3] BRILLSON LJ, 1979, J VAC SCI TECHNOL, V16, P1137, DOI 10.1116/1.570177

[4] EFFECTS OF ULTRATHIN OXIDES IN CONDUCTING MIS STRUCTURES ON GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1397 - 1401

[5] SCHOTTKY-BARRIER HEIGHT CONTROL BY USING KNOCK-ON EFFECT IN ION-IMPLANTATION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 : 53 - 56

[6] EFFECTS OF SPUTTERING DAMAGE ON CHARACTERISTICS OF MOLYBDENUM-SILICON SCHOTTKY-BARRIER DIODES [J]. SOLID-STATE ELECTRONICS, 1976, 19 (01) : 47 - 50

[7] PHOTOEMISSION STUDIES OF CESIATION OF ZNO [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4311 - 4314

[8] CONTROL OF SCHOTTKY-BARRIER HEIGHT USING HIGHLY DOPED SURFACE-LAYERS [J]. SOLID-STATE ELECTRONICS, 1976, 19 (06) : 537 - 543

[9] SHARMA BL, 1980, SOLID STATE TECHNOL, V23, P97

[10] SHEVENOCK S, 1975, IEEE INT ELECTRON DE, P211

[1] ON RESOLVING THE ANOMALY OF INDIUM-TIN OXIDE SILICON JUNCTIONS [J]. ELECTRON DEVICE LETTERS, 1981, 2 (07): : 184 - 186

[2] DEPENDENCE OF RESIDUAL DAMAGE ON TEMPERATURE DURING AR+ SPUTTER CLEANING OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 907 - 913

[3] BRILLSON LJ, 1979, J VAC SCI TECHNOL, V16, P1137, DOI 10.1116/1.570177

[4] EFFECTS OF ULTRATHIN OXIDES IN CONDUCTING MIS STRUCTURES ON GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1397 - 1401

[5] SCHOTTKY-BARRIER HEIGHT CONTROL BY USING KNOCK-ON EFFECT IN ION-IMPLANTATION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 : 53 - 56

[6] EFFECTS OF SPUTTERING DAMAGE ON CHARACTERISTICS OF MOLYBDENUM-SILICON SCHOTTKY-BARRIER DIODES [J]. SOLID-STATE ELECTRONICS, 1976, 19 (01) : 47 - 50

[7] PHOTOEMISSION STUDIES OF CESIATION OF ZNO [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4311 - 4314

[8] CONTROL OF SCHOTTKY-BARRIER HEIGHT USING HIGHLY DOPED SURFACE-LAYERS [J]. SOLID-STATE ELECTRONICS, 1976, 19 (06) : 537 - 543

[9] SHARMA BL, 1980, SOLID STATE TECHNOL, V23, P97

[10] SHEVENOCK S, 1975, IEEE INT ELECTRON DE, P211