ON RESOLVING THE ANOMALY OF INDIUM-TIN OXIDE SILICON JUNCTIONS

被引：26

作者：

ASHOK, S

FONASH, SJ

SINGH, R

WILEY, P

机构：

来源：

ELECTRON DEVICE LETTERS | 1981年 / 2卷 / 07期

关键词：

D O I：

10.1109/EDL.1981.25392

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：184 / 186

页数：3

共 12 条

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