Optical properties of silicon nanowires from cathodoluminescence imaging and time-resolved photoluminescence spectroscopy

被引：33

作者：

Dovrat, M. ^{[1
]}

Arad, N.

Zhang, X.-H.

Lee, S.-T.

Sa'ar, A.

机构：

[1] Hebrew Univ Jerusalem, Racah Inst Phys, IL-91904 Jerusalem, Israel

[2] Hebrew Univ Jerusalem, Ctr Nanosci & Nanotechnol, IL-91904 Jerusalem, Israel

[3] Chinese Acad Sci, Nano & Organ Photoelect Lab, Tech Inst Phys & Chem, Beijing, Peoples R China

[4] City Univ Hong Kong, Ctr Super Diamond & Adv Films, Hong Kong, Hong Kong, Peoples R China

[5] City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China

来源：

PHYSICAL REVIEW B | 2007年 / 75卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.75.205343

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Time-resolved photoluminescence spectroscopy and cathodoluminescence spectroscopy and imaging have been used to investigate the optical properties of oxygen- and hydrogen-terminated silicon nanowires. We have found that the red- and the blue-emission bands from these nanowires are characterized by homogeneous broadening and are due to interface states in the silicon core and oxygen-based defects at the oxide cladding layer, respectively. Our results exclude the possibility that quantum confinement effects are responsible for these emission bands.

引用

页数：5

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