LUMINESCENT CHARACTERISTICS OF PLASMA-OXIDIZED POROUS SILICON

被引：9

作者：

ARAKAKI, O

HATTA, A

ITO, T

HIRAKI, A

机构：

[1] Department of Electrical Engineering, Osaka University, Suita, Osaka, 565

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 12A期

关键词：

POROUS SILICON; PLASMA OXIDATION; PHOTOLUMINESCENCE; ELECTROLUMINESCENCE; PASSIVATION;

D O I：

10.1143/JJAP.33.6586

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Porous silicon (PS) partially oxidized using electron-cyclotron-resonance plasma has been investigated. Blueshifting of photoluminescence (PL) peaks with progressive oxidation was observed at the initial stage whereas a sufficiently oxidized PS specimen had a room-temperature PL peak fixed at similar to 685 nm. Electroluminescence (EL) from the specimens was stabilized by an additional H-plasma treatment after oxidation. This fact is well correlated with a significant reduction, after the H treatment, in intensity of cathodoluminescence (CL) peaks originating from defects in a SiO2 matrix of oxidized PS. These results are discussed in relation to the origins of FL, EL and CL.

引用

页码：6586 / 6590

页数：5

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